According to a new research report pertaining to the GaN on silicon technology market, published by Transparency Market Research , the global GaN on silicon technology market is expected to surpass US$ 80 million by 2027, expanding at a CAGR of nearly 19% from 2019 to 2027. According to the report, the global Gallium nitride (GaN) on silicon technology market would continue to be influenced by a range of macroeconomic and market-specific factors during the forecast period.
Growing Popularity of GaN on Silicon Technology Driving the Global GaN on Silicon Technology Market
- Gallium nitride (GaN) is considered as a next-generation power semiconductor. With a higher breakdown strength, higher switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform Si-based power chips.
- First-generation GaN-based power devices are likely to play a key role in the power conversion within battery chargers, smartphones, computers, servers, automotive lighting systems, and photovoltaic cells in the near future. At present, GaN is grown on a variety of substrates, including sapphire, silicon carbide (SiC), and silicon (Si).
- Currently, the gallium nitride on silicon (GaN-on-Si) technology has reached a high level of maturity, which explores the next-generation GaN on silicon technology with a higher level of integration (GaN-IC) and performance. These devices are widely used in radio-frequency amplifiers, high-voltage applications, and LEDs, primarily due to their abilities to operate at a high frequency, power density, and temperature with improved efficiency and linearity.
- Such innovations have greatly augmented the demand for devices with the GaN on silicon technology in various applications. In order to meet the rising demand for GaN semiconductor devices, leading players operating in the GaN on silicon technology market are utilizing economies of scale.